FDMA8878-F130 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
* Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A
* High Performance Trench Technology for Extremely Low RDS(on) .
* DC−DC Buck Converters
* Load Switch in NB
* Notebook Battery Power Management
ABSOLUTE MAXIMUM RATINGS TA.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance.
Features
* Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
* Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A .
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